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Intellectual property

Intellectual property
Domestic or overseas Domestic Form of the I.P Patent
Patent no. US  16/608,297 Registration no. 11,346,728
Name of the invention PIEZOELECTRIC SENSOR
Name of the invention(English) PIEZOELECTRIC SENSOR
I.P sector Electric
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Commercialization information

Commercialization information
I.P Abstract & Summary The present invention relates to a piezoelectric sensor using a piezoelectric polyvinylidene fluoride (PVDF) film. As an embodiment, there is proposed a piezoelectric sensor including: a PVDF film; an electrode layer which is formed on the top surface of the PVDF film; a substrate which is provided with a first electrode electrically connected to the electrode layer and a second electrode disposed at a location spaced apart from the first electrode; a non-conductive layer which covers the electrode layer; a first shield film which is electrically connected to the second electrode while being attached to the non-conductive layer; and a second shield film which is attached to the top surface of the PVDF film, and is connected to the first shield film while surrounding a stack of the PVDF film to the non-conductive layer.
Trade type of the I.P Rights transfer ( Consultation )
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I.P stage Idea stage

#PIEZOELECTRIC, #SENSOR